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High-power high-temperature operation laser diode with InGaAsP/InP buried heterostructure fabricated by single-step liquid-phase epitaxy

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Abstract

In optical fiber communication systems a light source which can put out high power and operate at high ambient temperature is required for long span transmission and high-system reliability. A suitable laser diode for the fiber communication system has been developed. The laser diode, a current confinement mesa-substrate buried-heterostructure laser diode (CCM-LD), can be fabricated by a single-step successive liquid-phase epitaxy instead of the two-step epitaxies needed for ordinary buried- heterostructure laser diodes.1

© 1982 Optical Society of America

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