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New narrow diffusion-type GaInAsP/InP injection laser for 1.3 μm

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Abstract

GaInAsP/InP lasers working at ~1.3-μm wavelength are attractive light sources for optical communication systems. So far, however, stripe geometry lasers with stripes sufficiently narrow to ensure kink-free light-current characteristics up to high-output power generally suffer from an increased threshold current, which limits the temperature range for cw operation.1,2 The new narrow-stripe diffusion-type GaInAsP/InP laser described in this paper not only can easily be fabricated but also shows stable and kink-free light-current characteristics under cw conditions in excess of 20-mW output power and an operation temperature up to 70°C.

© 1982 Optical Society of America

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