Abstract

In this work we present the properties of an In-GaAsP (λ = 1.3/μm) buried laser structure, grown by a single-step LPE, which yields lasers with low- threshold current, high quantum efficiency, high output power, and low-temperature sensitivity. These properties are obtained in a conventional, relatively simple, four-layer double heterostructure with no current blocking layers employed, resulting in high-production yield and repeatability.

© 1983 Optical Society of America