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High-speed operation of InP/InGaAsP/InGaAs avalanche photodiodes

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Abstract

To eliminate the tunneling component of the leakage current which severely degraded the performance of early homojunction long-wavelength avalanche photodiodes (APDs), structures with separate absorption and multiplication regions (SAM-APD) have been developed.1 The InP/In0.53Ga0.47As devices of this type which can be used at the 1.55-μm wavelength have achieved very low dark currents (<100 nA at 90% of the breakdown voltage),2–4 but they have not performed well at high bit rates because of the accumulation of photogenerated holes near the valence band discontinuity at the InP/InGaAs heterojunction interface.5

© 1984 Optical Society of America

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