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Planar Ga0.47In0.53As PIN photodiodes with extremely low dark current

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Abstract

A PIN-type photodiode fabricated with a Ga0.47In0.53As absorbing layer is widely used in optical receivers for the 1.3-1.6-μm wavelength region. We report here a double-heteroplanar PIN photodiode with extremely low dark currents and discuss the relationship between dark current and the lattice mismatch of the GaInAs/InP heterostructure.

© 1985 Optical Society of America

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