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Conferences > OFC > 1987 > ME > ME5

High-reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3μm

A. A. M. RASHID, R. F. MURISON, J. D. HAYNES, A. P. JANSSEN, G. D. HENSHALL, and T. E. STOCKTON

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Abstract

This paper describes the structure and performance of a high-reliability ridge waveguide laser suitable for very-high-data-rate transmission. The device is grown on an InP substrate using planar LPE with sulfur-doped InP. The ridge structure is formed by wet chemical etching two channels, as shown in Fig. 1.

© 1987 Optical Society of America

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