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Relative intensity noise and the selection of optimum cavity length for 1.3-μm InGaAsP light sources for microwave optical communications

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Abstract

In this paper we will show that cavity lengths >200 μm for 1.3-μm InGaAsP high-speed VPR-BH diode lasers1 provide the best overall device performance for use in microwave communications systems.2 We will present relative intensity noise and signal-to-noise data on devices of varying cavity length. An HP8970 noise figure meter and an HP8510 network analyzer were coupled to an HP 1000 computer for relative intensity noise and frequency response measurement and analysis. The advantage of the noise figure meter over the typical spectrum analyzer will be discussed.

© 1987 Optical Society of America

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