Surface degradation mechanism of InP/InGaAs APDs

HIROMI SUDO; MASAMITSU SUZUKI; NORIO MIYAHARA

doi:10.1364/OFC.1988.TuC2

Optical Fiber Communication
1988 OSA Technical Digest Series (Optica Publishing Group, 1988),
paper TuC2
•https://doi.org/10.1364/OFC.1988.TuC2

Surface degradation mechanism of InP/InGaAs APDs

HIROMI SUDO, MASAMITSU SUZUKI, and NORIO MIYAHARA

Optical Fiber Communication Conference 1988

New Orleans, Louisiana United States
ISBN: 1-55752-021-6

From the session
InGaAs Avalanche and Long-Wavelength Photodiodes (TuC)

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H. SUDO, M. SUZUKI, and N. MIYAHARA, "Surface degradation mechanism of InP/InGaAs APDs," in Optical Fiber Communication, Vol. 1 of 1988 OSA Technical Digest Series (Optica Publishing Group, 1988), paper TuC2.

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Abstract

InP/InGaAs avalanche photodiodes (APDs) hold considerable promise as receivers for long-haul high-bit-rate optical communication systems. There have been a few preliminary reports on their reliability,^1,2 but the failure mode and mechanism are not yet clear. We describe the course of surface degradation of InP/InGaAs APDs and propose the failure mechanism involved.

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