Abstract

The research of InP-based long wavelength optoelectronic integrated circuits (OEIC's) has been driven by the possibilities of cost reduction, and performance and reliability enhancement. The realization of many future fiber communication systems such as Gber-to-the-home (FTTH) and broadband integrated service digital network (BISDN) heavily relies on the maturity of OEIC technology. However, present OEICs still lag behind the hybrid ones in almost every aspect One major obstacle in OEIC development is the performance tradeoff when optical and electronic devices are integrated on the same substrate. Furthermore, the very complicated processing and the incompatible device layer structures for OEIC's make the integration of state-of-the-art devices extremely difficult. For example, the most advanced InP-based electronic devices were never successfully integrated with sophisticated lasers in a transmitter OEIC before. Therefore, the great challenge in OEIC research is to integrate the advanced photonic and electronic devices together with little tradeoff in their performance, reliability, and yield. In this paper, we present the OEIC transmitters made of very sophisticated lasers and transistors, λ/4-shifted 1.5 μm DFB lasers and InGaAs/InAlAs MOD-FETs. The response of the OEIC under direct modulation up to 11Gb/s will be reported.

© 1990 Optical Society of America