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Low Threshold Planarized Vertical-Cavity Surface-Emitting Lasers

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Abstract

Vertical-cavity surface-emitting lasers (VCSELs) have been attracting increasing amounts of attention in recent years [1]-[7]. They are attractive as a component for optoelectronic ICs, 2D arrays, and even as individual devices. There has also been much interest in strained quantum well lasers due to the beneficial aspects introduced by the strain [8]-[9]. Using a high-Q VCSEL with strained-layer quantum-wells, low threshold micro-laser arrays have recently been demonstrated [4]. In our work a similar structure is used, but more highly-reflecting graded-interface mirrors and a novel self-aligned planarization process are employed. The result is a more practical VCSEL structure with CW threshold current densities less than 1 kA/cm2, the lowest ever reported.

© 1990 Optical Society of America

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