Abstract
The mechanisms of hydrogen reaction with the glass structure were found to be divided into two groups. One was responsible for the reaction to glass networks, not defect centers, by which the increases in the short wavelength loss edge (SLE),1 hydroxyl group (OH), and long wavelength loss edge (LLE) were caused at elevated temperatures. The other could be the reaction to diamagnetic defect centers (s≡Si:) causing excess absorption at 0.63 Mm induced by a drawing process, with which the growth of OH and the generation of an absorption peak at 1.52 μm (Ref. 2) were mainly observed at room temperature.
© 1990 Optical Society of America
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