Abstract
There has been a surge of interest in vertical cavity surface emitting laser diodes (VCSELs).1-4 The ability of room temperature cw operation is crucial to the practical use of such devices. We report room temperature cw operation of GaAs VCSELs. The VCSEL shown in Fig. 1 was grown by molecular beam epitaxy and, starting from the Si doped GaAs substrate, consisted of an n-type Alo.3Gao.7As etch stop followed by an n-type twenty-two-pair Alo.1Gao.9As/AlAs semiconductor distributed Bragg reflector (DBR), an Alo.3Gao.7As/GaAs (0.5-μm) double heterostructure active region, a five-pair p-type Alo.1Gao.9As/Alo.7Gao.3As semiconductor DBR, a 450-ÅAlo.7Gao.3As phase matching layer, and finally a 100-Å GaAs heavily p-doped contact layer.
© 1990 Optical Society of America
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