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Conferences > OFC > 1990 > TUI > TUI4

Submicron silicon bipolar decision circuit and demultiplexer for very high speed lightwave communication systems

K. RUNGE, JAMES L. GIMLETT, D. CLAWIN, W. I. WAY, NIM K. CHEUNG, I. KIPNIS, and C. SNAPP

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Abstract

Lightwave systems technology has advanced dramatically over the past decade with recent experiments achieving a system capacity in excess of 1 Tbit/s km at 11 Gbit/s.1 Despite significant advances in GaAs FET technologies and heterojunction bipolar transistors, silicon bipolar technology has lately emerged as a promising low cost, high performance technology for multi-Gbit/s lightwave communication systems.

© 1990 Optical Society of America

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