Abstract

Dramatically improved performance has recently been theoretically predicted for strained-layer quantum well lasers^1-3 compared with unstrained quantum well or bulk lasers. Among the expected characteristics are enhanced differential gain (dg/dN), increased carrier dependence of the real part of the refractive index (dn/dN), and a reduced linewidth enhancement factor a. Extremely high bandwidths (up to 90 GHz)¹ have been predicted based on theoretical estimates of enhanced dg/dN. Also, the predicted reduction in a may lead to lasers with substantially reduced chirp and narrowed linewidths, while the predicted increase in dn/dN could yield single-longitudinal-mode lasers with extended tuning ranges.

© 1990 Optical Society of America