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High power, high speed operation of an InGaAsP/InP laser at 1.3 μm

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Abstract

A simultaneous operation of semiconductor lasers at high power and high speed at a wavelength of 1.3 μm is desirable in a number of applications such as long haul wideband optical fiber communications. In this study, we adopted a well established high power structure, i.e., a buried crescent InGaAsP/InP laser on a P-InP substrate to demonstrate these features. Instead of the commonly accepted long cavity laser (700 μm typically) for high power operation, we used a medium to short (300-150-μm) cavity length to increase the corner frequency. In contrast to the junction-down mounting technique for high power operation, we adopted the junction-up mounting configuration to be compatible with the standard practice for high frequency operation, such as the formation of a narrow mesa around the active stripe and the use of a reduced bonding pad to minimize the parasitic capacitance. The effect of the mirror coating on the power performance of the semiconductor laser was systematically studied. In contrast to the long cavity lasers, it has been found that the high reflectivity coating on the rear facet mirror is as important as the low reflectivity coating on the front facet mirror in terms of increasing the output power of the medium to short cavity laser.

© 1990 Optical Society of America

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