Abstract
MQW lasers are currently of interest since theoretical calculations show that they have superior operating performance compared to bulk active layer lasers. The theoretical improvements should be in parameters such as the threshold current density,1 characteristic temperature,2 resonant frequency, and SNR. We report on reliable BH SC MQW semiconductor lasers grown entirely by atmospheric pressure MOVPE in the GalnAsP quaternary system.
© 1990 Optical Society of America
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