Abstract

Glass waveguides are important building blocks for integrated optical circuits. They are cheap and easy to fabricate and have a lower insertion loss than semiconductor waveguides. However, devices such as sources, detectors, and high speed electronics cannot be made on glass nor can semiconductor devices be grown on glass waveguides because of the disparity between the two materials. Epitaxial lift-off is a useful technique allowing a thin semiconductor film to be detached from its parent substrate and subsequently transferred onto a target substrate where it is bonded by van der Waals forces. In recent papers^2,3 we reported the successful fabrication of metal-semiconductor-metal (MSM) detectors on transferred layers of GaAs bonded to glass as well as to LiNbO₃ waveguides. Most important, we also verified the optical interaction through evanescent coupling of guided light from the waveguide host to its grafted detector. We report on results obtained from high speed measurements carried out on glass waveguides using a 100-fs pulsed λ = 0.6-μm dye laser.

© 1990 Optical Society of America