Abstract

The high refractive index of III-V semiconductors makes possible the fabrication of mirrors with total internal reflection from an air-semiconductor interface. Highly efficient mirrors produced in this way have been demonstrated in combination with conventional waveguides.¹ It is possible, however, that such mirrors are best exploited in an entirely 2-D slab guided structure where facets can be shaped to form a wide variety of elements. Structures such as gratings, focusing mirrors, reflectors, and partial reflectors can be conceived, which, in combination with the semiconductor's electronic properties, can be used as the basis for integrated optoelectronic devices.

© 1990 Optical Society of America