Abstract

Wavelength division multiplexing (WDM) technologies are of interest to significantly increase the transport and processing capabilities of optical networks over those of present day networks in order to provide future broadband services. Several WDM network architectures have been proposed which use wavelength addressing for cross-connect and packet switching applications [1]-[2]. It is desirable for these WDM network applications to have lasers with sub-nanosecond wavelength switching over a wide wavelength range of several am, with simultaneous multi-Gb/s data modulation and long holding times greater than 1 μs. Recently, wavelength switching times of 10 to 20 ns with simultaneous FSK modulation at 100 to 200 Mb/s have been obtained using tunable DBR lasers [3]-[4]. In these experiments, the switching and modulation speeds were limited by the long carrier lifetime in the passive phase control and DBR sections. The fastest wavelength switching reported to date is 1.8 ns, which was obtained using a tunable DBR laser whose FM response was equalized to shorten the switching time [2]. This paper reports sub-nanosecond wavelength switching with simultaneous multi-Gb/s FSK modulation using a two-section DFB laser diode.

© 1991 Optical Society of America