Abstract
We demonstrate here a large-extinction-ratio wide-optical bandwidth field-induced guide/antiguide intensity modulator. Figure 1 is a schematic diagram of the device, which is fabricated from a GaAs/AlGaAs double heterostructure by forming a central waveguide electrode between two antiguide electrodes on the surface. A proton ion implantation, followed by annealing, was carried out in the areas surrounding the electrodes to make them semi-insulating. Spatial mode filters were formed at the ends of the modulator.
© 1991 Optical Society of America
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