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Heterojunction bipolar transistor-based long-wavelength optoelectronic integrated circuits

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Abstract

(Invited) The integration of photonic and electronic devices and circuits on the same semiconductor substrate is expected to play an important role in the near future in high-speed long-wavelength optical fiber communication systems. Such integrated structures, called optoelectronic integrated circuits (OEICs), offer the potential advantages of reduced parasitic capacitances and inductances, improved device performance, higher reliability and lower manufacturing costs. They also simplify packaging and permit greater functionality to be built in. Vigorous research efforts are currently under way all over the world to realize these circuits. Among the most widely investigated are photoreceiver and transmitter OEICs. In the photoreceiver a photodetector is monolithically integrated with a preamplifier circuit while in the transmitter, a laser diode is integrated with a driver circuit. Various electronic devices are available to the circuit designer in order to realize the electronic functions. The final choice is determined by the particular process methodology used in the fabrication of the OEIC, the compatibility of the photonic and electronic device structures, and the suitability of a particular electronic device for the application intended.

© 1991 Optical Society of America

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