Abstract
Currently, 1.3-μm double heterostructure (DH) Fabry-Perot (FP) laser diodes (LD's) are becoming widely used for optical fiber communication systems. However, multiple-quantum-well (MQW) LD's look more promising than DH LD's with respect to low-threshold-current,1 high-quantum-efficiency,2 high temperature, and high-bit-rate operation. Here we report on fabrication and characterization of 1.3-μm MQW-FP LD's with uniform lasing characteristics over a 2-in. (5.1-cm) diameter wafer as well as excellent high-temperature operation.
© 1991 Optical Society of America
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