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Novel tunable DBR-LDs grown by selective MOVPE using a waveguide-direction band-gap energy control technique

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Abstract

Tunable distributed Bragg reflector laser diodes (DBR-LDs) are attractive devices for coherent optical communication systems, both as transmitters and as local oscillators.1 Such a DBR-LD generally includes butt-joint structure, which is fabricated by selective etching of the active layer and following selective burying growth for the passive waveguiding layer. The relatively complicated process results in low device yield.

© 1992 Optical Society of America

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