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High-speed operation of strained-layer InGaAsP MQW distributed-feedback lasers with low chirping

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Abstract

Single-mode lasers that operate at high speed with low chirping are indispensable components for 10-Gbit/s direct intensity modulation direct-detection optical communication systems. To improve both modulation speed and chirping characteristics, we introduced multiple-quantum-well (MQW) structures with 10 nm-thick quaternary layers instead of conventional InGaAs wells, since a short carrier lifetime could be expected with wide wells.1 In this paper we are able to report an extremely small chirping width of 0.2 nm under 10 Gbit/s operation with this structure. In addition to achieving these first-rate results, carrier lifetime, differential gains, and alpha parameters were experimentally studied.

© 1992 Optical Society of America

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