Abstract
Ultralow-threshold operation of semiconductor lasers has become necessary in order to apply them, for example, to optical parallel processing and large-scale optical interconnects. Several methods have been reported, including the introduction of GRIN-SCH,1 short-cavity,2 and high-reflectance mirrors with quantum wells.1 In this paper we demonstrate another design of optical confinement layers, i.e., the introduction of AlAs/GaAs multilayer distributed Bragg reflectors (DBR’s) for replacing the bulk cladding in the separate-confinement heterostructure (SQW-SCH) of InGaAs/ GaAlAs single-quantum-well stripe lasers.
© 1993 Optical Society of America
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