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Conferences > OFC > 1993 > ThK > ThK4
  • Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication
  • 1993 OSA Technical Digest Series (Optica Publishing Group, 1993),
  • paper ThK4
  • •https://doi.org/10.1364/OFC.1993.ThK4

Intensity modulator based on highly efficient electro-absorption in an InGaAs/InP superlattice under high electric fields

D. Lesterlin, M. Nicolardot, M. Boulou, J. Langanay, C. Starck, J. Y. Emery, C. Labourie, and O. Legouezigou

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Abstract

Intensity modulators are key components for achieving high-bit- rate (>10 Gbit/s) and low-chirp sources for AM long-span optical transmissions. Large amounts of data have been reported on quantum-confined-Stark-effect (QCSE) intensity modulators,1-3 with less reported on Wannier-Stark effect (WSE) ones.4 We present an intensity modulator based on the InGaAs/InP superlattice (SL). The extinction ratio has been measured to be larger than 25 dB for a 1-V driving voltage at a 1.54-µm working wavelength. This efficient electroabsorption is attributed to resonance-induced electron delocalization on adjacent quantum wells under high electric fields (>150 kV/cm).5

© 1993 Optical Society of America

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