Abstract
Zero-bias-modulation laser diodes are attractive for the construction of simple optical interconnection systems. For zero- bias modulation it is essential to obtain a wide phase margin, which means wide timing margins in eye diagrams. The main cause of narrowed phase is lasing delay, which can be shortened by reducing the lasing threshold current. Recently, it was reported that an InGaAs/InGaAsP tensile-strained quantum-well (QW) laser exhibits extremely low threshold-current characteristics.1 Although these results are superior to those for compressive-strained QW lasers at high temperatures,1 the zero-bias modulation characteristics are not yet known. In this paper we investigate zero-bias modulation of InGaAs/InGaAsP tensile- strained QW lasers and demonstrate their potential for highspeed optical interconnection.
© 1993 Optical Society of America
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