Abstract

(Strained-layer) InGaAs(P) multiple-quantum-well lasers and laser amplifiers have greatly progressed recently.¹ The optional grown-in biaxial strain, compressive as well as tensile, modifies the valence-band structure, which results in reduction of the in-plane hole effective mass, nonradiative recombinations, and intervalence-band absorption, leading to enhanced device performance. Furthermore, TE/TM polarization control is made possible by enhancing transitions between the conduction band and either the heavy-hole band or the light-hole band. Here, progress in 1.3- and 1.5-µm-wavelength InGaAs(P) strained-layer multiple-quantum-well semiconductor-laser amplifiers (SL-QWLAs) for application to optical communication systems is reviewed.

© 1994 Optical Society of America