Abstract

Highly uniform and reproducible wafer-fabrication processes for long-wavelength InGaAsP/InP semiconductor lasers have been established. Crystal growth is carried out entirely by metal- organic chemical-vapor deposition (MOCVD) on 2-in.-diameter InP wafers that are processed through the subsequent fabrication steps just before cleaving. Long-term stable operation of 3000 h has been realized for 1.48-μm high-power laser diodes (LDs) at a light output of 100 mW at 50°C and for 1.3-μm Fabry-Perot LDs at a light output of 10 mW at 85°C. High power capability in excess of 300 mW for a 1.48-μm LD with an 1800-μm cavity length has also been demonstrated.

© 1994 Optical Society of America