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High-power 1.02-μm strained-InGaAs-quantum-well laser diodes for 1.3-μm-band fiber amplifiers fabricated by a full-wafer process

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Abstract

Praseodymium-doped fiber amplifiers (PDFAs) are the most promising candidates for 1.3-μm-band fiber amplifiers. A signal gain of 28.3 dB was demonstrated with a PDFA module pumped by 1.02-μm strained-InGaAs-quantum-well laser diodes (LDs).1 The amplifier had a pumping configuration of four LD modules, each with an output power of 110 mW. However, to compete with PDFAs pumped by LD-pumped solid-state lasers, higher output power and lower chip cost are required. Here, we report high-power and low-divergence 1.02-μm strained-InGaAs-quantum-well LDs for PDFAs. The LDs were fabricated by a 2-in. full-wafer process with excellent uniformity.

© 1995 Optical Society of America

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