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Conferences > OFC > 1995 > ThG > ThG3

High-power, high-efficiency, highly uniform 1.3-μm InGaAsP/InP strained MQW lasers

K. Kojima

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Abstract

High-efficiency, high-power 1.3-μm lasers that operate up to 85°C are required for applications such as fiber in the loop.1–4 Because cost will be a major factor for these applications, very high processing uniformity and high yields are necessary. In this paper we report on InGaAsP/InP lasers exhibiting high efficiency and high-peak-power operation at 85°C fabricated by 50-mm wafer processing. Their excellent uniformity over six wafers is also shown.

© 1995 Optical Society of America

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