Abstract

Low-threshold-current 1.3-μm lasers with high characteristic temperatures for both threshold current and slope efficiency are required for the realization of zero-bias and automatic-power-control-free (APC-free) modulation in optical interconnection systems.¹ We have optimized the 1.3-μm InGaAsP strained multiple-quantum-well (MQW) laser structure with respect to both threshold current and temperature characteristics. As a result, we have successfully fabricated low-threshold and thermally stable 1.3-μm lasers in which threshold current is 1.3 mA for high-reflection-coated (HR-coated) lasers (R_f = 70%, R_r = 95%) and is 2.8 mA for uncoated lasers. We believe the threshold current of 2.8 mA to be the lowest ever reported for long-wavelength lasers with uncoated facets.

© 1995 Optical Society of America