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Conferences > OFC > 1995 > WM > WM2

Fully integrated ion-implanted GaAs MESFET/MSM-based OEIC receiver

W.-H. Chang, C.-G. Shih, J.-S. Wang, D. Barlage, and M. Feng

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Abstract

Low-cost, high-performance optical receivers are essential for optical data communications. By optimization of the process, we established a high-performance ion-implanted GaAs MESFET technology.1 The unity-current gain-cutoff frequency fT is 30 GHz for a 0.6 μm × 100 μm MESFET. MSM detectors were used because they were compatible with MESFET process and provide a reasonable performance.

© 1995 Optical Society of America

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