Abstract

There is an increasing demand for highly efficient, low cost 1300-nm devices for fiber-in-the-loop applications. This requires inexpensive packaging combined with a high yield, temperature insensitive, highly efficient semiconductor laser. Recent reports of 1300-nm strained InAlGaAs devices show high efficiency and less temperature dependence. At present only ridge waveguide lasers can be fabricated in this materials system, which demand high reflectivity coatings to achieve threshold currents of less than 40 mA at 85°C,¹ increasing cost. To mass manufacture with a high yield, uncoated devices are essential, hence InGaAsP buried heterostructures are still preferred.

© 1996 Optical Society of America