Abstract

InGaAsP lasers incorporating strained quantum wells have recently shown superior performance in the 1.3-µm band. New application, including CATV transmission, RF links, and OTDRs can take advantage of the higher output power delivered by strained layer devices. The same epitaxial structure can also be optimized for high-speed and very low threshold laser. We report package ridge lasers with 100-mW cw output power from a single-mode fiber. Also, 7 mA threshold, 2.5 Gbit/s lasers are demonstrated from similar epitaxial material.

© 1996 Optical Society of America