Abstract
Vertical-cavity surface-emitting lasers (VCSELs) using intracavity oxide apertures have demonstrated improved performances compared to other designs.1 This is mainly due to the stronger mode confinement and better overlap with the gain medium. However, it is difficult to control the size of these apertures. Feature sizes are best controlled with photolithographically defined processing steps as is the case for the implant-apertured index-guided VCSEL (I2 -VCSELs) [Fig. 1].2 For these devices, the index guiding is provided by an etched GaAs pillbox. The current aperture is defined by photolithographic ion implantation.
© 2002 Optical Society of America
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