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  • Optical Fiber Communication Conference
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper WL1

Progress Towards High Power 1.5 μm GaInNAsSb/GaAs Lasers for Raman Amplifiers

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Abstract

We present a CW 1.5 μm GaInNAsSb laser with threshold current density of 1.06 kA/cm2, characteristic temperature of 101 K, and 140 mW CW output power, tested epitaxial-side up. 527 mW (pulsed) were achieved from a single facet.

© 2004 Optical Society of America

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