Abstract
Dilute nitride alloys are attractive candidates for lasers and detectors between 1.25 and 1.6µm. We have demonstrated the first low-threshold continuous-wave 1.55µm GaAs-based lasers and the first >1.5µm monolithic VCSELs using GaInNAsSb quantum wells as the active region and photodetectors based upon similar alloys.
© 2006 Optical Society of America
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