Multi-Frequency Laser Monolithically Integrating InGaAsP Gain Elements with Amorphous Silicon AWG

M. H. Kwakernaak; W. K. Chan; N. Maley; H. Mohseni; L. Yang; D. R. Capewell; B. Kharas; V. Frantz; T. Mood; G. A. Pajer; D. A. Ackerman; J. G. Kim; D. H. Lee

Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference
Technical Digest (CD) (Optica Publishing Group, 2006),
paper OWH4

Multi-Frequency Laser Monolithically Integrating InGaAsP Gain Elements with Amorphous Silicon AWG

M. H. Kwakernaak, W. K. Chan, N. Maley, H. Mohseni, L. Yang, D. R. Capewell, B. Kharas, V. Frantz, T. Mood, G. A. Pajer, D. A. Ackerman, J. G. Kim, and D. H. Lee

Optical Fiber Communication Conference 2006

Anaheim, California United States
5–10 March 2006
ISBN: 1-55752-802-0

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Silicon Photonics and Quantum Cryptography (OWH)

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M. H. Kwakernaak, W. K. Chan, N. Maley, H. Mohseni, L. Yang, D. R. Capewell, B. Kharas, V. Frantz, T. Mood, G. A. Pajer, D. A. Ackerman, J. G. Kim, and D. H. Lee, "Multi-Frequency Laser Monolithically Integrating InGaAsP Gain Elements with Amorphous Silicon AWG," in Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference, Technical Digest (CD) (Optica Publishing Group, 2006), paper OWH4.

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Abstract

We demonstrate a photonic integrated circuit using a novel monolithic integration platform combining InGaAsP gain elements and index matched amorphous silicon waveguide devices. The AWG based multi-frequency laser emits eight 100-GHz-spaced wavelengths near 1550 nm.

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