Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300 GHz

M. Piels; A. Ramaswamy; W. Sfar Zaoui; J. E. Bowers; Y. Kang; M. Morse

doi:10.1364/OFC.2009.OMR1

Optical Fiber Communication Conference and National Fiber Optic Engineers Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper OMR1
•https://doi.org/10.1364/OFC.2009.OMR1

Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300 GHz

M. Piels, A. Ramaswamy, W. Sfar Zaoui, J. E. Bowers, Y. Kang, and M. Morse

Optical Fiber Communication Conference 2009

San Diego, California United States
22–26 March 2009
ISBN: 978-1-55752-865-0

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Si Photonic Devices (OMR)

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M. Piels, A. Ramaswamy, W. S. Zaoui, J. E. Bowers, Y. Kang, and M. Morse, "Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300 GHz," in Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper OMR1.

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Abstract

The nonlinearity of a 300 GHz gain bandwidth Separate Absorption Charge Multiplication (SACM) Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second order dynamic range was 84.8 dB∙Hz^1/2. The largest third order dynamic range was 101.5 dB∙Hz^2/3.

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