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Conferences > OFC > 2010 > OMI > OMI3

25 GHz Operation of Silicon Optical Modulator with Projection MOS Structure

Junichi Fujikata, Jun Ushida, Yu Ming-Bin, Zhu ShiYang, Ding Liang, Patrick Lo Guo-Qiang, Dim-Lee Kwong, and Takahiro Nakamura

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Abstract

We report a high-speed and compact silicon optical modulator based on the free carrier plasma dispersion in a silicon rib waveguide with a MOS (metal-oxide-semiconductor) junction structure. To achieve high-speed and high-efficiency performance, an improved structure of a very small rib waveguide including a projection MOS junction was studied. We demonstrated high speed of 25 GHz operation in case of 120-200 μm phase-shift length and high optical modulation efficiency of 0.5-0.67 Vcm for VπL by using a projection MOS junction structure. According to the carrier-density simulation, higher operation bandwidth up to 40 GHz can be realized.

© 2010 IEEE Communications Society, IEEE Photonics Society, OSA, Telcordia

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