Abstract
Germanium waveguide avalanche photodiode with 10dB gain and excess noise factor with keff below 0.2 was demonstrated. Gain-bandwidth-product above 350GHz was achieved at voltages around 3V. The avalanche photodetector was monolithically integrated into front-end CMOS.
© 2010 IEEE Communications Society, IEEE Photonics Society, OSA, Telcordia
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