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Low Temperature Wafer Bonding of Silicon to InP and Silicon to LiNbO3 Using Self-Assembled Monolayers

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Abstract

Procedures for wafer bonding between silicon and InP and between silicon and LiNbO3 at temperatures below 120 °C are reported. The bonding is based on the deposition of functionalized, organic self assembled monolayers.

© 2012 Optical Society of America

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