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Integrated single and multi-layer Si3N4 platform for ultra-low loss propagation and small bending radii

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Abstract

A combination of low loss and small bend radius Si3N4 waveguide regions are integrated with one etch step. Propagation losses of 1.5 dB/m and 7 dB/m are measured with a transition loss of ≤0.5 dB/taper.

© 2014 Optical Society of America

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