Low Driving Voltage (&lt; 400mVpp) Electro-absorption Modulator Laterally Integrated with VCSEL

Hamed Dalir; Yuta Takahashi; Fumio Koyama

doi:10.1364/OFC.2014.W4C.3

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper W4C.3
•https://doi.org/10.1364/OFC.2014.W4C.3

Low Driving Voltage (< 400mV_pp) Electro-absorption Modulator Laterally Integrated with VCSEL

Hamed Dalir, Yuta Takahashi, and Fumio Koyama

Optical Fiber Communication Conference 2014

San Francisco, California United States
9–13 March 2014
ISBN: 978-1-55752-993-0

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Long Wavelength VCSELs and Quantum Dot Lasers (W4C)

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H. Dalir, Y. Takahashi, and F. Koyama, "Low Driving Voltage (< 400mVpp) Electro-absorption Modulator Laterally Integrated with VCSEL," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper W4C.3.

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Abstract

A compact (8µm long) electro-absorption slow-light modulator is laterally integrated with a 980nm InGaAs VCSEL incorporating a bow-tie-shape oxide aperture. We demonstrate a low driving voltage below 400mV_pp and large signal modulation up to 25Gbps.

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