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High Performance 1.3µm InAs Quantum Dot Lasers Epitaxially Grown on Silicon

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Abstract

We demonstrate 1.3 µm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).

© 2014 Optical Society of America

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