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Athermal and wavelength-trimmable silicon MZI

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Abstract

CMOS-compatibly fabricated silicon athermal MZI is trimmed in wavelength by the amount from −0.15 to −5.15 nm using thermal annealing process over 400 °C. Temperature-dependence less than 2 pm/°C is maintained after the annealing.

© 2016 Optical Society of America

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