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Substrate Removed Silicon Mach-Zehnder Modulator for High Baud Rate Optical Intensity Modulations

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Abstract

We demonstrate a substrate-removed silicon Mach-Zehnder modulator with the 3-dB electro-optical bandwith beyond 50 GHz. Based on this modulator, 80 Gb/s on-off-keying and 50 Gbaud PAM-4 optical modulations are experimentally achieved without electrical pre-equlization.

© 2016 Optical Society of America

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