Ultra-low Threshold Semiconductor Lasers

Shinji Matsuo; Shinji Matsuo

doi:10.1364/OFC.2016.W4H.3

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2016),
paper W4H.3
•https://doi.org/10.1364/OFC.2016.W4H.3

Ultra-low Threshold Semiconductor Lasers

Shinji Matsuo

Optical Fiber Communication Conference 2016

Anaheim, California United States
20–22 March 2016
ISBN: 978-1-943580-07-1

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Indium Phosphide Photonic Integrated Circuits (W4H)

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S. Matsuo, "Ultra-low Threshold Semiconductor Lasers," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper W4H.3.

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Abstract

A compact active region with a large optical confinement factor is essential for achieving a low-threshold-current laser, which is a key device for low-power-consumption optical links in datacom and computercom networks.

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