Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si Photonics

Ming-Hao Kuo; Meng Chun Lee; Che-Wei Tien; Wei-Ting Lai; Pei-Wen Li; Pei-Wen Li

doi:10.1364/OFC.2017.W2A.7

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper W2A.7
•https://doi.org/10.1364/OFC.2017.W2A.7

Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si Photonics

Ming-Hao Kuo, Meng Chun Lee, Che-Wei Tien, Wei-Ting Lai, and Pei-Wen Li

Optical Fiber Communication Conference 2017

Los Angeles, California United States
19–23 March 2017
ISBN: 978-1-943580-23-1

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Joint Poster Session I (W2A)

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M. Kuo, M. C. Lee, C. Tien, W. Lai, and P. Li, "Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si Photonics," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper W2A.7.

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Abstract

Ge-dot/SiO₂/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.

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